Features of the current-voltage characteristic of the Ti-Si@O@Al junction Ti-Si@O@Al

The results on measuring the I--V characteristics of metal-semiconductor transition within Ti (200 nm)|Si@O@Al (180 nm)|Ti (203 nm) test structure are presented. basis Si@O@Al nanocomposite is a solid solution Al in amorphous silicon a-Si(Al). has form characteristic reverse-biased ohmic contact between metal and p-type semiconductor, which implies that a-Si(Al) substitutional solution. It shown fits well framework model varistor effect nanocomposite. Within percolation model, it give values resistivity, overestimated with respect to resistance Keywords: nanocomposite, silicon, solution, Schottky barrier, nonlinear conductor, dangling bonds.